Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering
By Y. Lee, M. Winkler, S. Siah, R. Brandt, Tonio Buonassisi. 2011
142 citations recorded by the source corpus.
Cuprous oxide (Cu2O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu2O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu2O at temperatures above 250 K, reaching 62 cm2/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu2O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/780ae1377ffdc743293400df5a4e8a220f02039a
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In Materials Chemistry
Citations in the corpus
- Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites (2015, background): “8 where rH,ii is the Hall coefficient for ionized impurity scattering, Z is the charge on the ionized site, Nt is the trap density, b = 24mkT/ħ(2)βS(2), and βS is the inverse screening length.[53] Thus, to reduce the impact of ionized impurities on mobility, it is again ideal to have a high dielectr”