Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

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Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor (2014, background): “Even though ternary or multi-metal oxide TFTs have high mobility, they often suffer from severe bias, light and environmental instabilities, limiting their potential applications.(27) For instability, three degradation models have been proposed which can be considered as plausible mechanisms such as”
Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors (2015, background): “The adoption of a high quality passivation layer on the bare channel layer would further improve the PBS, NBS and NBIS stability of the resulting TMO TFTs [11, 75, 76].”