Raman scattering from high-frequency phonons in supported n-graphene layer films.

By Awnish K. Gupta, Gugang Chen, P. Joshi, Srinivas Tadigadapa, P. Eklund. Nano letters (Print), 2006

1,429 citations recorded by the source corpus.

Results of room-temperature Raman scattering studies of ultrathin graphitic films supported on Si (100)/SiO2 substrates are reported. The results are significantly different from those known for graphite. Spectra were collected using 514.5 nm radiation on films containing from n = 1 to 20 graphene layers, as determined by atomic force microscopy. Both the first- and second-order Raman spectra show unique signatures of the number of layers in the film. The nGL film analogue of the Raman G-band in graphite exhibits a Lorentzian line shape whose center frequency shifts linearly relative to graphite as approximately 1/n (for n = 1 omegaG approximately 1587 cm-1). Three weak bands, identified with disorder-induced first-order scattering, are observed at approximately 1350, 1450, and 1500 cm-1. The approximately 1500 cm-1 band is weak but relatively sharp and exhibits an interesting n-dependence. In general, the intensity of these D-bands decreases dramatically with increasing n. Three second-order bands are also observed (approximately 2450, approximately 2700, and 3248 cm-1). They are analogues to those observed in graphite. However, the approximately 2700 cm-1 band exhibits an interesting and dramatic change of shape with n. Interestingly, for n < 5 this second-order band is more intense than the G-band.

Subfields: Materials Chemistry, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/77555c78eb865b85314cf9046c667b7620bc7284

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Citations in the corpus

Spark plasma sintering of graphene reinforced zirconium diboride ultra-high temperature ceramic composites (2013, background): “On the other hand, the G peak of 6 vol% GNP reinforced composite (at 1588 cm ) has shifted to higher energy than expected G peak (1583 cm ) that is suggestive of the residual compressive stresses acting on GNPs incurred during thermal contraction of ZrB2 matrix [43–45].”
Annealing-induced structural changes of carbon onions: High-resolution transmission electron microscopy and Raman studies (2014, neutral): “The position of G-band (about 1590 cm ) in the studied CNOs does not change noticeably with TMAX, and is close to that in non-disordered graphene [19] even for TMAX = 1500 C, where CNOs are disordered as evidenced by HRTEM and Raman (D-band, A-band, and oTO mode) results.”
Electronic properties of graphene in a strong magnetic field (2010, neutral): “(Ferrari et al., 2006; Graf et al., 2007; Gupta et al., 2006; Pisana et al., 2007; Yan et al., 2007)].”
Graphene synthesis, characterization and its applications in nanophotonics, nanoelectronics, and nanosensing (2015, background): “30 G band of graphene attributed to different number of graphene layers [101]”