Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

By P. Jackson, D. Hariskos, R. Wuerz, O. Kiowski, A. Bauer, T. Friedlmeier, M. Powalla. 2015

914 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/76a0ef3c1d3bc1ce4668ee7d3c72b37a08dc112c

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In Electrical and Electronic Engineering

1. A. Tiwari
2. D. Hariskos
3. R. Wuerz
4. Thomas Feurer

In Materials Chemistry

1. A. Tiwari
2. D. Hariskos
3. R. Wuerz
4. Thomas Feurer

Citations in the corpus

• New world record Cu(In, Ga)(Se, S)2 thin film solar cell efficiency beyond 22% (2016, methodology): “Recently, intentional K doping was reported to enhance the performance of CdS/Cu(In,Ga)Se2 solar cell, demonstrating a conversion efficiency exceeding 21% [2].”
• Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications (2017, methodology): “[32] and [51] are similar in the front region of the absorber, as shown in Figure 2.”
• Improved Photocurrent in Cu(In,Ga)Se2 Solar Cells: From 20.8% to 21.7% Efficiency with CdS Buffer and 21.0% Cd-Free (2015, background): “7% [4]), although not necessarily by applying a PDT process.”