CrXTe3 (X = Si, Ge) nanosheets: two dimensional intrinsic ferromagnetic semiconductors

By Xingxing Li, Jinlong Yang. 2014

284 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/765f44f5a3566c02a5b1bf27ac00f5bcc8d988e0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Vincent Meunier
2. Di Xiao
3. Mauricio Terrones
4. Bobby G. Sumpter
5. M. McGuire
6. E. Ringe
7. Jinlong Yang
8. Xingxing Li

In Materials Chemistry

1. M. McGuire
2. Xiaodong Xu
3. W. Yao
4. Di Xiao
5. D. Cobden
6. Mauricio Terrones
7. Steven G. Louie
8. H. Terrones

Citations in the corpus

• First principles design of spintronics materials (2016, background): “CrXTe3 (X = Si, Ge) nanosheets Bulk CrXTe3 (X = Si, Ge) are layered crystals with a big interlayer van der Waals gap, which can be easily exfoliated into nanosheets, as predicted by a recent theoretical study [111].”
• Recent Advances in Two-Dimensional Materials beyond Graphene. (2015, background): “strain can be an effective knob for tuning themagnetic properties of these compounds.(417,418) With so many”
• Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit (2017, background): “A variety of layered magnetic compounds have recently drawn increased interest due to the possibility of retaining their magnetic properties down to monolayer thickness 12-15 , 21 .”