Effects of annealing time on defect-controlled ferromagnetism in Ga1−xMnxAs
By S. Potashnik, K. Ku, Seung-Hyun Chun, Joseph J. Berry, N. Samarth, Peter Schiffer. 2001
265 citations recorded by the source corpus.
We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1−xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250 °C for less than 2 h significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga1−xMnxAs to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/763d03fc1533be2260412d645a2eacc21f23044b
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, background): “Here the sensitivity of a(x) to the carrier and defect density (Mack et al., 2008; Mašek et al., 2003; Potashnik et al., 2001; Sadowski and Domagala, 2004) has to be considered.”