Metal–insulator transition in two-dimensional electron systems

By S. Kravchenko, Myriam Paula Sarachik. 2003

325 citations recorded by the source corpus.

The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization in two-dimensional systems of non-interacting or weakly interacting electrons, the ever-present randomness causes the resistance to rise as the temperature is decreased, leading to an insulating ground state. However, new evidence has emerged within the past decade indicating a transition from the insulating to metallic phase in two-dimensional systems of strongly interacting electrons. We review earlier experiments that demonstrate the unexpected presence of a metallic phase in two dimensions, and present an overview of recent experiments with emphasis on the anomalous magnetic properties that have been observed in the vicinity of the transition.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Physical and Theoretical Chemistry

View Paper: https://www.semanticscholar.org/paper/760a5c6de6c941542685bdadecf4277b2ae0af7c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. E. Rossi
2. E. Hwang
3. S. Adam
4. V. Vinokur
5. A. Morello
6. Gerhard Klimeck
7. Andrew Dzurak
8. A. Lopatin

In Electronic, Optical and Magnetic Materials

1. K. Efetov

In Physical and Theoretical Chemistry

1. S. Adam
2. E. Hwang
3. E. Rossi

Citations in the corpus

• Electronic transport in two-dimensional graphene (2010, background): “Early comprehensive reviews of 2D MIT can be found in the literature (Abrahams et al., 2001; Kravchenko and Sarachik, 2004).”
• Silicon quantum electronics (2012, methodology): “…which confines the electron layer in a MOSFET, can also have relatively low disorder, with reported electron mobilities as high as 40,000 cm2/V s (Kravchenko and Sarachik, 2004), although the imperfect lattice match between the Si and SiO2 creates defects at the interface, thus constraining the…”
• Granular electronic systems (2006, background): “In particular, the metal to insulator transition recently observed in disordered films (Abrahams et al., 2001; Kravchenko and Sarachik, 2004) has not been yet theoretically understood, although some plausible scenarios have been suggested recently (see, e.g. (Punnoose and Finkelstein, 2005)).”