A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives

By Pascal Chevalier, G. Avenier, G. Ribes, A. Montagné, E. Canderle, Didier Celi, N. Derrier, C. Deglise, C. Durand, T. Quemerais and 36 more. 2014 IEEE International Electron Devices Meeting, 2014

164 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/75a5c39a9dcca96f5fde6d7fe99c368615a6c229