Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

By Hyojung Kim, Min‐Ju Choi, J. Suh, Ji Su Han, Sun Gil Kim, Q. Le, Soo Young Kim, Ho Won Jang. NPG Asia Materials, 2020

140 citations recorded by the source corpus.

Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years. Thus far, three-dimensional (3D) halide perovskites have been the most investigated materials for resistive switching memory devices. However, 3D-based memory devices display ON/OFF ratios comparable to those of oxide or chalcogenide ReRAM devices. In addition, perovskite materials are susceptible to exposure to air. Herein, we compare the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA)2Cs3Pb4I13, to those based on 3D CsPbI3. Astonishingly, the ON/OFF ratio of the (PEA)2Cs3Pb4I13-based memory devices (109) is three orders of magnitude higher than that of the CsPbI3 device, which is attributed to a decrease in the high-resistance state (HRS) current of the former. This device also retained a high ON/OFF current ratio for 2 weeks under ambient conditions, whereas the CsPbI3 device degraded rapidly and showed unreliable memory properties after 5 days. These results strongly suggest that quasi-2D halide perovskites have potential in resistive switching memory based on their desirable ON/OFF ratio and long-term stability. A type of computer memory that stores data by changing the resistance of insulating crystals can be made more durable with organic chemical additives. Resistive memory devices constructed from inorganic crystals known as halide perovskites are inexpensive and have minimal power requirements. However, they can degrade quickly in humid conditions. Hyojung Kim from Seoul National University in South Korea and colleagues now report that these stability issues can be improved by sandwiching thin layers of aromatic hydrocarbons between halide perovskite crystals. The water-repelling nature of the organic molecules helps double the lifespan of the new hybrid compared to an unmodified halide perovskite device. In addition, the organic layers augment the differences between ‘ON’ and ‘OFF’ resistive memory states, making device operation more reliable. ReRAM devices based on halide perovskites have recently emerged as a new class of data storage device, where the switching materials used in these devices have attracted huge attention in recent years. In this study, we compare the resistive switching characteristics of ReRAM devices based on a quasi-2D halide perovskite, (PEA)2Cs3Pb4I13, to those based on 3D CsPbI3. Astonishingly, the ON/OFF ratio of the (PEA)2Cs3Pb4I13-based memory devices was much higher than that of the CsPbI3 device. Also this device retained a high ON/OFF current ratio for two weeks under ambient conditions, whereas the CsPbI3 device degraded rapidly and showed unreliable memory properties after five days. We strongly believe that quasi-2D halide perovskites have potential in resistive switching memory based on their high ON/OFF ratio and long-term stability.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/758133aa6f0e249b82ced105202475426526f852