InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

By W. Wong, T. Sands, N. Cheung, M. Kneissl, D. Bour, P. Mei, L. Romano, N. Johnson. 2000

183 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/740065503ebde674607021d82de72d6343f4f409

Citations in the corpus

• Gallium nitride vertical power devices on foreign substrates: a review and outlook (2018, unknown): “Performance enhancement was demonstrated after transferring quasi-vertical LEDs to Si [48], metal [47] and flexible substrates [49].”