Efficiency limitations for wide-band-gap chalcopyrite solar cells

By M. Gloeckler, J. Sites. 2005

303 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/73ef9ccc608e1a34d2e4a1f7b2dd2484bd2fef78

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. J. Sites
2. M. Gloeckler
3. O. Hansen
4. A. Crovetto

In Electrical and Electronic Engineering

1. J. Sites
2. M. Gloeckler
3. O. Hansen
4. A. Crovetto

In Materials Chemistry

1. J. Sites
2. M. Gloeckler
3. O. Hansen
4. A. Crovetto

Citations in the corpus

• What is the band alignment of Cu 2 ZnSn(S,Se) 4 solar cells? (2017, background): “This has two beneficial effects: (i) downward shift of the CBM, which increases the CBO, and (ii) downward shift of the VBM, which decreases the hole population, a key factor in reducing the interface recombination rate [35].”
• Band-gap grading in Cu(In,Ga)Se2 solar cells (2005, background): “Recombination at the CdS/CIGS interface is not included since earlier calculations have shown that for positive band offsets, interface recombination has a negligible effect [16].”