Hysteresis in single-layer MoS2 field effect transistors.
By D. Late, Bin Liu, H. Matte, V. Dravid, C. Rao. ACS Nano, 2012
1,064 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/590c004ca4bee53c9c9d86bc9846a916cd32dfbf
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
- Filippo Giubileo
- Giuseppe Luongo
- L. Iemmo
- Tobias Foller
- L. Genovese
- M. Schleberger
- A. Di Bartolomeo
- James C. Hone
In Electrical and Electronic Engineering
- D. Late
- Xingzhu Chen
- James Towfik Teherani
- Filippo Giubileo
- Sekhar Babu Mitta
- Ankur Nipane
- James C. Hone
- Michal Lipson
In Materials Chemistry
- Filippo Giubileo
- A. Di Bartolomeo
- Giuseppe Luongo
- L. Iemmo
- D. Late
- Umesh V. Waghmare
- Qing Zhang
- R. Ganatra
Citations in the corpus
- The rising star of 2D black phosphorus beyond graphene: synthesis, properties and electronic applications (2017, background): “sistors, and a relatively low temperature environment is necessitated to neglect the hysteresis behavior by suppressing the charge trapping [107, 124, 125].”
- Electrical characterization of 2D materials-based field-effect transistors (2020, background): “Unfortunately, many back-gated devices that are pervasive across the 2Dmaterials community show significant hysteresis [52, 113] (or even worse, device degradation) frommeasurement to measurement, which makes the differential extraction between the positive and negative B-field measurements prone to”