Suppression of Metal-Insulator Transition in VO2 by Electric Field–Induced Oxygen Vacancy Formation

By Jaewoo Jeong, N. Aetukuri, T. Graf, Thomas D. Schladt, M. Samant, Stuart S. P. Parkin. Science, 2013

1,005 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/739acb6561db93ff852fed9bbd1fbc534fce225f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Axel Hoffmann
2. T. Jungwirth
3. Julie Grollier
4. Mark D. Stiles
5. A. Slavin
6. Allan H. MacDonald
7. A. Thiaville
8. Alexey V. Kimel

In Materials Chemistry

1. T. Jungwirth
2. Allan H. MacDonald
3. Axel Hoffmann
4. D. Ralph
5. S. May
6. Y. Tserkovnyak
7. Mark D. Stiles
8. Nitin Samarth

Citations in the corpus

• Electric double-layer transistors: a review of recent progress (2015, neutral): “Last year, Parkin and coworkers reported an atypical example of oxygen ionic conduction in VO2 transistors and observed a phenomenon of suppression of metal–insulator transition [150].”
• Interface-Induced Phenomena in Magnetism (2016, positive): “When using ionic liquids and ion gels, care must be taken to distinguish between electrostatic and electrochemical processes within the oxide layer [Jeong et al., 2013]; recent progress has been made with this issue in specific oxides (Walter et al.”