Recent progress in CdTe and CdZnTe detectors
By Tadayui Takahashi, S. Watanabe. 2001
571 citations recorded by the source corpus.
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and /spl gamma/-ray detection. The high atomic number of the materials (Z/sub Cd/=48, Z/sub Te/=52) gives a high quantum efficiency in comparison with Si. The large bandgap energy (Eg/spl sim/1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this paper we summarize 1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and 2) the technique for improving energy resolution and photopeak efficiencies. Applications of these imaging detectors in future hard X-ray and /spl gamma/-ray astronomy missions are briefly discussed.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Radiation
View Paper: https://www.semanticscholar.org/paper/738ff79023ef276d1e0c968fe856c38b491b3587
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In Electrical and Electronic Engineering
Citations in the corpus
- Review of hybrid pixel detector readout ASICs for spectroscopic X-ray imaging (2016, background): “In contrast to this, a lifetime-mobility for holes around 1 10−5 cm2/V was reported [30].”
- Detection of gamma photons using solution-grown single crystals of hybrid lead halide perovskites (2016, methodology): “pure CdTe and CdZnTe SCs, usually grown from a melt by the Czochralski method, have been commercially deployed.(10,11) Overall, due to these stringent requirements, the prices for solidstate semiconductor detectors drastically rise from visible light to hard-radiation detection by 2-3 orders of magn”