Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor

By V. Le, T. Do, J. R. Retamal, P. Shao, Yu-Hong Lai, Wen‐Wei Wu, Jr-hau He, Yu-Lun Chueh, Y. Chu. Nano Energy, 2019

145 citations recorded by the source corpus.

Abstract Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, light-weight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80% in visible light and high performance with a ON/OFF resistance ratio > 105, stable endurance to 103 cycles and long retention time of 105 s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 °C, which deliver a pathway for future applications in flexible transparent smart electronics.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/730196b0cf587a7046254b7ebd16b4594ed0da71

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1. Jiangtao Wei
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5. Jing Ma
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8. Peishuai Song

Citations in the corpus

• Review of current high-ZT thermoelectric materials (2020, background): “[415] Le V-Q, Do T-H, Retamal JRD, Shao P-W, Lai Y-H, Wu W-W, He J-H, Chueh Y-L, Chu Y-H (2019) Van der Waals”