Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

By N. Izard, S. Kazaoui, K. Hata, T. Okazaki, T. Saito, S. Iijima, N. Minami. 2008

144 citations recorded by the source corpus.

Substantial progress on field effect transistors (FETs) consisting of semiconducting single wall carbon nanotubes (s-SWNTs) without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic nanotubes is confirmed by optical absorption, Raman measurements, and electrical measurements. This outstanding result was made possible in particular by ultracentrifugation (150000g) of solutions prepared from SWNT powders using polyfluorene as an extracting agent in toluene. Such s-SWNTs processable solutions were applied to realize FET, embodying randomly or preferentially oriented nanotube networks prepared by spin coating or dielectrophoresis. Devices exhibit stable p-type semiconductor behavior in air with very promising characteristics. The on-off current ratio is 105, the on-current level is around 10μA, and the estimated hole mobility is larger than 2cm2∕Vs.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/72e7e96cce5b8970b3467769ab9e271c0ddbd7ab