Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation

By T. Mohiuddin, Antonio Lombardo, R. Nair, A. Bonetti, G. Savini, R. Jalil, N. Bonini, D. Basko, Costas Galiotis, Nicola Marzari and 3 more. 2008

1,681 citations recorded by the source corpus.

We uncover the constitutive relation of graphene and probe the physics of its optical phonons by studying its Raman spectrum as a function of uniaxial strain. We find that the doubly degenerate E(2g) optical mode splits in two components: one polarized along the strain and the other perpendicular. This splits the G peak into two bands, which we call G(+) and G(-), by analogy with the effect of curvature on the nanotube G peak. Both peaks redshift with increasing strain and their splitting increases, in excellent agreement with first-principles calculations. Their relative intensities are found to depend on light polarization, which provides a useful tool to probe the graphene crystallographic orientation with respect to the strain. The 2D and 2D(') bands also redshift but do not split for small strains. We study the Gruneisen parameters for the phonons responsible for the G, D, and D(') peaks. These can be used to measure the amount of uniaxial or biaxial strain, providing a fundamental tool for nanoelectronics, where strain monitoring is of paramount importance.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/72cc2cc77d1c288d85f4e8e920859b427e7efe10

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Citations in the corpus

Super-elastic graphene ripples for flexible strain sensors. (2011, background): “The G-peak line shift can be affected only by doping but not uniaxial strain.(23) As a result, the 2D peak shift is the optimal parameter for estimating uniaxial strain in Figure 1.”
Raman Spectroscopic Characterization of Graphene (2010, methodology): “(61) did some detailed research of the G band of graphene under uniaxial stress.”
Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, methodology): “Rama modes are strongly affected by strains of C–C bonds occurring under tress [49], and this c n be used to cha acterize th na ure of he i te ctio between graphene and its substrate.”
Tailoring the mechanical properties of 2D materials and heterostructures (2018, methodology): “It is calculated based on the following expressions for either biaxial or uniaxial strain field for the 2D peak in graphene [154], respectively:”
The influence of thermal annealing to remove polymeric residue on the electronic doping and morphological characteristics of graphene (2013, background): “05%) [34,38].”
Electronic properties of mesoscopic graphene structures: Charge confinement and control of spin and charge transport (2011, neutral): “A magnetization enhancement of 100% was predicted for a strain on the order of 20%, which might be possible to induce by mechanical methods [134].”