Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties

By Jae-Young Yu, †. A. S. Chung, J. Heath. 2000

212 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/72b7cce0db0acda0454f55e8082d5e3eb94a5665

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Nathan S. Lewis
2. Harry A. Atwater
3. S. A. Maier

In Biomedical Engineering

1. E. Warren
2. Nathan S. Lewis
3. Harry A. Atwater
4. S. Boettcher
5. R. Briggs
6. D. Turner-Evans
7. M. C. Putnam
8. Joshua M. Spurgeon

In Electrical and Electronic Engineering

1. Nathan S. Lewis
2. E. Warren
3. S. Boettcher
4. Harry A. Atwater
5. R. Briggs
6. D. Turner-Evans
7. M. C. Putnam
8. Joshua M. Spurgeon

Citations in the corpus

• Si microwire-array solar cells (2010, methodology): “Thermal diffusion doping, in-situ doping, and ion-implantation have been used to dope Si wires.[22, 46, 47] In particular, in-situ doping has been studied using p-type (trimethylboron and diborane) and n-type (phosphine) dopants in Si wires grown using SiH4.”
• Electrical transport along bacterial nanowires from Shewanella oneidensis MR-1 (2010, background): “The resistivity estimated from this measurement is 1 Ω·cm (Materials and Methods), comparable in magnitude to that of moderately doped silicon nanowires (11).”