A III–V nanowire channel on silicon for high-performance vertical transistors

By K. Tomioka, M. Yoshimura, T. Fukui. Nature, 2012

716 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7297d9ee3eb7834e67d35d70ef99d1484744aa26

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. J. Wallentin
2. Magnus Borgström

In Electrical and Electronic Engineering

1. Magnus Borgström
2. J. Wallentin
3. H. Joyce
4. J. Boland
5. M. Johnston
6. L. Herz
7. H. Snaith
8. N. Park

Citations in the corpus

• Doping of semiconductor nanowires (2011, background): “Importantly, strain-induced defects tend to terminate at the heterointerface, away from the active region [8].”
• High transconductance organic electrochemical transistors (2013, neutral): “2 2 1,863 690 932 III–V NW: n-InAs NW30, (31) SiNx 0.”
• A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy (2016, background): “properties are propelling new applications as diverse as nanowire-based tandem solar cells [7], single photon sources [3, 8, 9], photodetectors [10], nanoscale lasers [11, 12] and ultrahigh density wrap-gate transistors [13].”