Electrical spin injection and transport in germanium

By Yi Zhou, Wei Han, Li-Te Chang, F. Xiu, Minsheng Wang, M. Oehme, I. Fischer, J. Schulze, R. Kawakami, Kang L. Wang. 2011

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We report the first experimental demonstration of electrical spin injection, transport, and detection in bulk germanium (Ge). The nonlocal magnetoresistance (MR) in n-type Ge is observable up to 225 K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal MR and the spin lifetime in n-type Ge is also investigated.

Subfields: Atomic and Molecular Physics, and Optics

View Paper: https://www.semanticscholar.org/paper/71c74f0a64d8a50d1b5db4d960d996ecc78a077c