Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector

By Di Wu, Yuange Wang, Longhui Zeng, Cheng Jia, E. Wu, Tingting Xu, Zhifeng Shi, Yongtao Tian, Xinjian Li, Y. Tsang. ACS Photonics, 2018

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The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices. Recently, a newly discovered 2D layered PtSe2 thin film has exhibited outstanding broadband sensitivity and optoelectronic properties. In our work, a large-area 2D layered PtSe2 thin film was used to construct the PtSe2/CdTe heterojunction infrared photodetector (PD). This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 506.5 mA/W, a high specific detectivity of 4.2 × 1011 Jones, a high current on/off ratio of 7 × 106, and a fast response speed of 8.1/43.6 μs at room temperature. Additionally, the PtSe2/CdTe heterojunction PD exhibits excellent repeatability and stability in air. The high-performance of the PtSe2/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/70e7ac2a289a4d6f1ab27788f2fc7f6612906bef