Formation of a passivating CH3NH3PbI3/PbI2 interface during moderate heating of CH3NH3PbI3 layers

By T. Supasai, N. Rujisamphan, K. Ullrich, A. Chemseddine, T. Dittrich. 2013

267 citations recorded by the source corpus.

Layers of CH3NH3PbI3 are investigated by modulated surface photovoltage spectroscopy (SPV) during heating in vacuum. As prepared CH3NH3PbI3 layers behave as a p-type doped semiconductor in depletion with a band gap of 1.5 eV. After heating to 140 °C the sign of the SPV signals of CH3NH3PbI3 changed concomitant with the appearance of a second band gap at 2.36 eV ascribed to PbI2, and SPV signals related to charge separation from defect states were reduced after moderate heating.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6edad1961cc8603591b613ba73b3209db92b6ff4

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In Electrical and Electronic Engineering

1. Ashraf Uddin
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Citations in the corpus

• Perovskite Solar Cells: Progress and Advancements (2016, background): “It is summarized as: CH3NH3PbI3 → PbI2 + CH3NH2↑ +HI↑ The perovskite CH3NH3PbI3 thin films are found to undergo decomposition under thermal stress at a temperature between ~100 °C [117] and 140 °C [118]; the decomposition rate increases”