Chip-integrated ultrafast graphene photodetector with high responsivity

By Xuetao Gan, R. Shiue, Yuanda Gao, I. Meric, T. Heinz, Kenneth L. Shepard, James C. Hone, S. Assefa, Dirk Englund. Nature Photonics, 2013

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Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz (2018, methodology): “For graphene-based integrated PDs, the inversion symmetry can be conveniently relaxed through an asymmetric positioning of the waveguide with respect to the graphene coverage, and several devices [12, 27] have been reported.”
Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap (2014, neutral): “In addition, graphene photodetectors have also been demonstrated for ultra-wide band (300 nm–6 μm) operation, far exceeding the bandwidth capabilities of other current photodetectors [16, 17].”
Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity (2015, background): “ntroduction Since the discovery of graphene in the year of 2004, capabilities of modern electronic and optoelectronic devices are being extended by the emerging ﬁeld of two-dimensional (2D) materials.[1, 2, 3, 4] Photodetector is one of the important optoelectronic devices which are widely used in v”