Influence of Mn and Nb dopants on electric properties of chemical-solution-deposited BiFeO3 films

By Chin-Feng Chung, Jen-Po Lin, Jenn‐Ming Wu. 2006

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Polycrystalline Mn-doped, Nb-doped, and pure BiFeO3 (BFO) films were fabricated via chemical solution deposition (CSD) method. Influence of Mn and Nb dopants on electric properties of BFO films were studied. The current density versus electric field (J-E) characteristics indicated that conduction mechanisms of Mn-doped, Nb-doped, and pure BFO films annealed at 500°C were Ohmic conduction, grain boundary limited conduction, and space charge limited conduction, respectively. The effect of Mn and Nb dopants on electric properties of BFO films was interpreted by defect chemistry and chemical reaction in the CSD process. The Nb dopant is effective in improving electrical properties of CSD-derived BFO films, while Mn is harmful in this respect.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6e6960e2db6b073ed829c32495e6d53ad8c31897

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Citations in the corpus

• Investigation of transport behavior in Ba doped BiFeO3 (2012, background): “In the low electric field region the value of slope of the curves is less than unity for all the samples indicating grain boundary limited conduction [31].”