Thin-film metal oxides in organic semiconductor devices: their electronic structures, work functions and interfaces
By M. Greiner, Zhenghong Lu. 2013
410 citations recorded by the source corpus.
Over the last decade, metal oxides have proven to be important materials for organic electronics. Oxides are often used as charge-injection and charge-selective interlayers to engineer the electrical resistance at electrode/organic interfaces in organic devices. An oxide’s behavior as an interlayer depends strongly on the oxide’s electronic properties—such as its band structure and work function. The numerous degrees of freedom in an oxide’s electronic properties allow these characteristics to be easily modified. The present review outlines the use of metal oxides in organic electronics, and discusses the factors that affect the oxide’s properties that are relevant to oxide/organic interfaces.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/6d418c391ebc75e4a7fa8a37dbea2befbe1b85ba
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In Electrical and Electronic Engineering
Citations in the corpus
- Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, result): “has been demonstrated for tungsten oxide (WOx ) [101], [104], [111], which also owes its hole selectivity to a high WF value, similar to MoOx .”
- Industrially feasible, dopant‐free, carrier‐selective contacts for high‐efficiency silicon solar cells (2017, background): “Compared with doped-silicon-layer-based CSCs that involve complex deposition conditions with toxic gases and may lead to undesired optical losses [21], these dopant-free CSCs, are easily deposited, potentially at low cost, by thermal evaporation, atomic layer deposition (ALD), spin-coating, brush pa”
- Electron and Hole Transport Layers: Their Use in Inverted Bulk Heterojunction Polymer Solar Cells (2014, background): “Finally, when dealing with metal-oxides, it should be also considered (in the proper choosing of the best HTL for the particular system) that the work function of those materials strongly depends on the concentration of defects [129], with a decrease of the WF if oxygen is removed from the material,”