Synthesis and Fabrication of High‐Performance n‐Type Silicon Nanowire Transistors

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Transport phenomena in nanofluidics (2008, background): “Cui et al., 2003; Zheng et al., 2004", and germanium/silicon core/shell heterostructures have demonstrated enhanced gate coupling !”
Strong broadband optical absorption in silicon nanowire films (2007, background): “Semiconducting nanowires have recently been the subject of great scientific and technological interest due to their promising electrical [ 1 ], optoelectronic [2], mechanical [3], and chemical properties [4].”
Nanowire Transistor Performance Limits and Applications (2008, background): “This is due partly to the dominance of Si in the semiconductor industry, but also reflects the high-level of control of structure and doping demonstrated in fundamental SiNW growth studies [12], [13].”
Fabrication of silicon nanowire devices for ultrasensitive, label-free, real-time detection of biological and chemical species (2006, background): “, and moreover, as both p-type and n-type materials with well-defined and reproducible high-performance FET device propertie”
Multiplexed electrical detection of cancer markers with nanowire sensor arrays (2005, methodology): “, diborane was used as dopant, with a B:Si ratio of 1:4,000; for n-type silicon nanowire”