Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires
By Xiangfeng Duan, Charles M. Lieber. 2000
690 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/6d09cbacd8a2eb38dbf0dc5ea8a925a6341b508b
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In Atomic and Molecular Physics, and Optics
- Peidong Yang
- Lars Samuelson
- Joshua E. Goldberger
- M. Law
- Charles M. Lieber
- Yu Huang
- Jianfang Wang
- L. Wallenberg
In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
- Peidong Yang
- M. Law
- Lars Samuelson
- Joshua E. Goldberger
- Yu Huang
- Charles M. Lieber
- Yi Cui
- Xiangfeng Duan
Citations in the corpus
- Solid-phase diffusion mechanism for GaAs nanowire growth (2004, methodology): “, and has subsequently been used for explaining the growth of III-V semiconductor nanowire”
- Single gallium nitride nanowire lasers (2002, methodology): “The electronic properties of GaN nanowires grown by various methods have been extensively studie”
- Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, neutral): “Nanowires have been grown using several different kinds of techniques including chemical vapor deposition (CVD) [9, 10], laser ablation [11], supercritical fluid solution phase [12], metalorganic chemical vapor deposition (MOCVD) [13–15], chemical beam epitaxy (CBE) [16, 17] and molecular beam epita”