Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor

By Albert Fert, H. Jaffrès. 2001

899 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6c37d9f807654ca3ec7efb438bbdcc39a5e36d00

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Albert Fert
2. M. E. Flatté
3. David D. Awschalom
4. Claude Chappert
5. F.N. Van Dau
6. O. Yazyev
7. T. Jungwirth
8. Wolfgang Wernsdorfer

In Electrical and Electronic Engineering

1. Albert Fert
2. M. E. Flatté
3. David D. Awschalom
4. Claude Chappert
5. Wolfgang Wernsdorfer
6. T. Jungwirth

Citations in the corpus

• Nobel Lecture: Origin, development, and future of spintronics (2008, methodology): “…to introduce a discontinuity of the spin accumulation at the interface, increase the proportion of spin on the semiconductor side, and shift the depolarization from the metallic to the semiconductor side the same conclusions appear also in a paper by Rashba Rashba, 2000; Fert and Jaffrès, 2001 .”
• Challenges for semiconductor spintronics (2007, background): “Inserting a spin-dependent interface resistance from a Schottky barrier or tunnel barrier resolves this proble”