High performance SiC trench devices with ultra-low ron

By Takashi Nakamura, Y. Nakano, M. Aketa, R. Nakamura, Shuhei Mitani, H. Sakairi, Y. Yokotsuji. International Electron Devices Meeting, 2011

256 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6bddce09b7a3ef687da8491e098537b9e0baa517