Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation

By Takashi Minemoto, T. Matsui, Hideyuki Takakura, Y. Hamakawa, T. Negami, Y. Hashimoto, T. Uenoyama, M. Kitagawa. 2001

528 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6b847bed01768a9d3d3f3dbb9dc17bb02b0ad331

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Nicolas Barreau
2. D. Hariskos
3. O. Hansen
4. C. Platzer‐Björkman
5. C. Guillén
6. J. Herrero
7. A. Tiwari
8. A. Crovetto

In Materials Chemistry

1. D. Hariskos
2. O. Hansen
3. D. Abou‐Ras
4. C. Platzer‐Björkman
5. C. Guillén
6. J. Herrero
7. A. Tiwari
8. Nicolas Barreau

Citations in the corpus

• What is the band alignment of Cu 2 ZnSn(S,Se) 4 solar cells? (2017, background): “Therefore, if interface recombination is the dominant recombination path, a cliff-like CBO will result in a lower EA than the absorber’s band gap and in a lower Voc, as shown in device simulation work [27, 34, 35].”
• Co‐optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells (2015, unknown): “5 eV [8,14-19].”
• Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments (2010, background): “A higher spike impedes the Jsc and FF [106].”