Femtosecond high-field transport in compound semiconductors
By A. Leitenstorfer, S. Hunsche, J. Shah, M. Nuss, W. Knox. 2000
138 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/6ac85a5b40ced6b8ec6cf370c57be5e924ec4406
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- Tadao Nagatsuma
- Willie J Padilla
- T. Kampfrath
- Koichiro Tanaka
- Miriam S. Vitiello
- D. Mihailovic
- Xicheng Zhang
- H. Joyce
In Electrical and Electronic Engineering
- Tadao Nagatsuma
- Willie J Padilla
- Koichiro Tanaka
- T. Kampfrath
- Miriam S. Vitiello
- Xicheng Zhang
- Masayoshi Tonouchi
- H. Joyce
Citations in the corpus
- Materials for terahertz science and technology (2002, background): “The maximum drift velocity is also an important material parameter, but it is generally limited by the intraband scattering rate or by intervalley scattering in direct semiconductors such as GaA”
- The 2023 terahertz science and technology roadmap (2023, methodology): “TES has been used to study semiconductors [153] and extended to various other materials [154, 155].”