Room temperature dislocation plasticity in silicon

By Andrew M. Minor, Erica T. Lilleodden, M. Jin, E. A. Stach, D. Chrzan, J. Morris. 2005

132 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/690b10b4ff909e4441a54e5632b899f056ea3464

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. Chandross
2. Robert W. Carpick
3. Alexander Stukowski
4. Saurav Goel
5. I. Szlufarska

In Biomedical Engineering

1. Saurav Goel
2. Robert W. Carpick
3. Alexander Stukowski
4. Xichun Luo

In Electrical and Electronic Engineering

1. A. Kovalchenko
2. G. Cross
3. Alexander Stukowski
4. Saurav Goel

Citations in the corpus

• Recent advances in single-asperity nanotribology (2008, methodology): “Hybrid nanoindentation and TEM techniques have been pioneered by Minor and coworkers [84–88] and they have been reviewed elsewhere [89, 90].”
• Influence of microstructure on the cutting behaviour of silicon (2016, background): “Across a number of those research studies, ductility in silicon by large has been attributed either to the occurrence of high pressure phase transformation (HPPT) [1], crystal twinning [2] or surface nucleation of dislocations [3, 4].”