Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

By Shinhyuk Yang, D. Cho, M. Ryu, S. Park, Chi-Sun Hwang, Jin Jang, Jae Kyeong Jeong. 2010

148 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/68c9a916a6a623d17dadd3d36334951bddd9ea5d

How researchers see this paper

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In Electrical and Electronic Engineering

1. Jang Yeon Kwon
2. S. Parthiban

In Materials Chemistry

1. Jang Yeon Kwon
2. S. Parthiban

Citations in the corpus

• Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor (2014, background): “17 V/dec, and an on/off current ratio of 10(9).(39)”