Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density

By Hikaru Kobayashi Asuha, O. Maida, Masao Takahashi, Hitoo Iwasa. 2003

220 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/687b32ba6ac404beee242efe055825c03c0ace86

Citations in the corpus

• Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water (2015, unknown): “% nitric acid at 110°C for 10 minutes [13, 14] or in”