Development of hafnium based high-k materials—A review

By J. Choi, Yuanbing Mao, Jane P. Chang. 2011

551 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6864d601bb440708c6a6774d41bed3789dcf55e8

How researchers see this paper

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In Electrical and Electronic Engineering

1. Kourosh Kalantar-Zadeh
2. Richard B. Kaner
3. Jaroslav Stejskal
4. Miroslava Trchová
5. I. Sapurina
6. Gaoquan Shi

Citations in the corpus

• The Origin of Ferroelectricity in Hf$_{x}$ Zr$_{1-x}$ O$_2$: A Computational Investigation and a Surface Energy Model (2015, unknown): “F,E = F - V0 DE= U – TS +  Ω - V0 DE (7)”
• A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides (2017, methodology): “HfO2 is the material of choice for the electronics industry, with a relative dielectric constant of >20 and a bandgap of >5 eV (19).”