Mechanism of graphene oxide formation.
By Ayrat M. Dimiev, James M. Tour. ACS Nano, 2014
841 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering
View Paper: https://www.semanticscholar.org/paper/6856840b3e4076cfa8f8afee4ec67e851e40cd23
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Citations in the corpus
- Graphene oxide incorporated polysulfone substrate for the fabrication of flat-sheet thin-film composite forward osmosis membranes (2015, methodology): “In this study, GO nanosheets prepared via a modified Hummer's method [34, 35] were used as fillers to modify the polysulfone (PSf) support of TFC-FO membranes.”
- Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “While the first three methods can produce graphene with a relatively perfect structure and excellent properties, GO has the important advantage of being produced using inexpensive graphite as raw material by cost-effective chemical methods with a high yield [109]-[110].”
- High-yield preparation of graphene oxide from small graphite flakes via an improved Hummers method with a simple purification process (2015, background): “Although the edge-to-center oxidation propagations have the same rates for small and large graphite flakes, the percentage of the oxidized part increases much faster for small flakes than that for large ones [22].”