Widely Tunable Narrow-Linewidth Monolithically Integrated External-Cavity Semiconductor Lasers

By T. Komljenovic, S. Srinivasan, E. Norberg, M. Davenport, G. Fish, John E. Bowers. IEEE Journal of Selected Topics in Quantum Electronics, 2015

137 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/681c2872fb7c3fc48f6425c6c3e1e36d825e84e6

How researchers see this paper

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In Electrical and Electronic Engineering

1. Goran Z. Mashanovich
2. John E. Bowers
3. D. Thomson
4. D. Marris‐Morini
5. Graham T. Reed
6. Laurent Vivien
7. Po Dong

Citations in the corpus

• III-V-on-Silicon Photonic Devices for Optical Communication and Sensing (2015, unknown): “Several bonding techniques are being used: molecular bonding [2], metal bonding [3] and adhesive bonding [4].”
• Integrated microwave photonics (2015, background): “Losses as low as 0.5 dB/cm in C-band [2] and 0.7 dB/cm in O-band [3], with small bend radii, have been demonstrated in silicon platform.”
• Roadmap on silicon photonics (2016, background): “We make distinction between III–V lasers, and assembled (butt-coupled chips) or heterogeneous (single-chip, monolithic) silicon laser designs [19].”