A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides
By Jing Li, J. Sui, Y. Pei, C. Barreteau, D. Bérardan, N. Dragoe, W. Cai, Jiaqing He, Li-dong Zhao. 2012
346 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/675227cd7d9db116dae1c086ea1a2901f518eee8
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Recent advances in high-performance bulk thermoelectric materials (2016, methodology): “1 at 923 K was achieved via heavily doping with Ba and refining grain sizes down to 200–400 nm.(313) A very high value of zT of 1.”
- Recent progress in thermoelectric materials (2014, background): “[82] reported a higher ZT value of 1.”