Influence of the electrical parameters on the input impedance of a fractal structure realised on silicon
By T. Haba, G. Ablart, T. Camps, F. Olivié. 2005
139 citations recorded by the source corpus.
Subfields: Artificial Intelligence, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/6669f044add75fea5bf04c20c2e4e3a2850161a0
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- Todd J. Freeborn
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- Gary W. Bohannan
Citations in the corpus
- Fabrication of a Fractional Order Capacitor With Desired Specifications: A Study on Process Identification and Characterization (2011, background): “only if there is formation of porous structure on a metallic surface [9].”
- Approximated Fractional Order Chebyshev Lowpass Filters (2015, background): “While these devices are not yet commercially available, recent research regarding their manufacture and production shows very promising results [19–21].”
- Analog Fractional Order Controller in Temperature and Motor Control Applications (2008, background): “Haba et al. (2005) demonstrated that it is possible to create fractional order impedances in the 100 kHz to 10 GHz range by fabrication of a fractal structure on silicon.”