Epitaxial Graphenes on Silicon Carbide
By P. First, W. Heer, T. Seyller, C. Berger, J. Stroscio, J. Moon. 2010
180 citations recorded by the source corpus.
This article reviews the materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals and progress toward the deterministic manufacture of graphene devices. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) differs from growth on the C-terminated SiC(0001) surface, resulting in, respectively, strong and weak coupling to the substrate and to successive graphene layers. Monolayer epitaxial graphene on either surface displays the expected electronic structure and transport characteristics of graphene, but the non-graphitic stacking of multilayer graphene on SiC(0001) determines an electronic structure much different from that of graphitic multilayers on SiC(0001). This materials system is rich in subtleties, and graphene grown on the two polar faces of SiC differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/65af8fa6ef8908b88637be0c3e0b12c37a1b81c5
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In Electrical and Electronic Engineering
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Citations in the corpus
- Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, background): “, the SiC(0001) surface) is considered an extremely promising route for the production of large-area graphene suitable for device applications [1].”
- Transport Between Twisted Graphene Layers (2010, background): “By engineering the substrate underlying exfoliated samples [3–5], identifying exfoliated fragments with folds[6], or controlling epitaxial growth conditions[7, 8], the size and shape of the honeycomb lattice arrays [9, 10] and the number of graphene layers and their orientations can all be varied.”
- Moiré bands in twisted double-layer graphene (2010, unknown): “* _ 1 - 3a2 ~ 1 + 6a2 ' [11]”
- Electronic transport in two-dimensional graphene (2010, background): “…the Si atoms to desorb, resulting in several graphene layers at the surface (Berger et al., 2004, 2006; de Heer et al., 2010; Emtsev et al., 2009; First et al., 2010) that are believed to be very weakly coupled and of very good quality (Hass et al., 2008; Miller et al., 2009; Orlita et al.,…”