Infrared plasmons on heavily-doped silicon

By J. Ginn, R. Jarecki, E. Shaner, P. Davids. 2011

133 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Civil and Structural Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/64b5a076c1cdbd74fdad3308a9b707751d3d9007

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Shyamala Devi Malagari
2. Gang Chen
3. Y. Zhong
4. Svetlana V. Boriskina
5. H. Ghasemi
6. T. Hamilton
7. D. Wasserman

In Civil and Structural Engineering

1. Gang Chen
2. Svetlana V. Boriskina
3. H. Ghasemi
4. A. McGaughey
5. Zhuomin M. Zhang
6. Ronggui Yang
7. M. Kaviany
8. Zhiting Tian

In Electrical and Electronic Engineering

1. Shyamala Devi Malagari
2. Gang Chen
3. Y. Zhong
4. Svetlana V. Boriskina
5. T. Hamilton
6. D. Wasserman
7. A. McGaughey
8. M. Kaviany

Citations in the corpus

• Review of mid-infrared plasmonic materials (2015, background): “For waveguiding applications, particularly for on-chip interconnects, CMOS compatibility is essential, ruling out Au and Ag, but opening the door for the transparent conducting oxides and nitrides, the silicides, and potentially even doped Si.”
• Plasmonic materials for energy: From physics to applications (2013, background): “provide good overlap with the thermal emission spectrum. However, new plasmonic materials, including metal oxides and nitrides [98, 99], graphene [36, 108], and highly doped semiconductors such as Si [101, 109, 110], InSb and InAs [102], can provide strong resonant enhancement of the near-field heat”