Quantifying defects in graphene via Raman spectroscopy at different excitation energies.

By Luiz Gustavo Cançado, A. Jorio, E. Ferreira, F. Stavale, Carlos A. Achete, Rodrigo B. Capaz, M. Moutinho, Antonio Lombardo, T. Kulmala, Andrea C. Ferrari. Nano letters (Print), 2011

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We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance ∼3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

Subfields: Computational Mechanics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/649a040e575d46a27bc2d37b5fc0399030984f5f

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In Computational Mechanics

  1. A. Jorio
  2. R. Young
  3. Zhenhua Ni
  4. Zhangting Wu
  5. Andrea C. Ferrari
  6. Nicola Maria Pugno
  7. Luiz Gustavo Cançado

In Materials Chemistry

  1. A. Jorio
  2. Andrea C. Ferrari
  3. Zhipei Sun
  4. Tawfique Hasan
  5. Francesco Bonaccorso
  6. Zhenhua Ni
  7. F. Torrisi
  8. Kostas Kostarelos

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