Stacking fault band structure in 4H–SiC and its impact on electronic devices

By M. Miao, S. Limpijumnong, W. Lambrecht. 2001

165 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6466b2a68554724b5017cbc9062adb44f3876bd7

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1. Andreas Fissel

Citations in the corpus

• Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties (2003, background): “Recent calculations of localized electronic states around stacking faults creating a 3C-like sequence in hexagonal SiC [372,404,405], revealed that already the stacking faults give rise to quasi-twodimensional energy band states in the band gap around 0:2 eV below the lowest conduction band.”