Interpretation of admittance, capacitance-voltage, and current-voltage signatures in Cu(In,Ga)Se2 thin film solar cells

By T. Eisenbarth, T. Unold, R. Caballero, C. Kaufmann, H. Schock. 2010

270 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6437270d82140a82038b0a033a020cf74756ca4d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Jiang Tang
2. G. Wang
3. Chao Chen
4. Matthew C. Beard
5. Shiyou Chen

In Electrical and Electronic Engineering

1. Jiang Tang
2. D. Xue
3. Chao Chen
4. G. Wang
5. Matthew C. Beard
6. Xun Xiao
7. Shiyou Chen
8. H. Hillhouse

In Materials Chemistry

1. Jiang Tang
2. D. Xue
3. Chao Chen
4. Matthew C. Beard
5. Xun Xiao
6. Shiyou Chen
7. H. Hillhouse

Citations in the corpus

• Enhanced Sb2Se3 solar cell performance through theory‐guided defect control (2017, background): “profiling characterization methods because drive-level capacitance profiling is sensitive only to the bulk defects, while capacity–voltage is sensitive to the bulk traps plus interfacial traps.[3,27,28] The calculated interfacial trap states in I-Sb2Se3 and W-Sb2Se3 devices were approximately 10(15)”