Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D

By Md. Sazzad Hossien Chowdhury, S. A. Shahahmadi, P. Chelvanathan, Sieh Kiong Tiong, N. Amin, Kuaanan Techato, N. Nuthammachot, Tanjia Chowdhury, Montri Suklueng. 2020

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Abstract In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. Power conversion efficiency >25% can be achieved at  400 nm thickness of absorber layer, respectively. The study assumed 0.6 eV Gaussian defect energy level below the perovskite’s conduction band with a characteristic energy of 0.1 eV. These conditions resulted in an identical outcome on the n/i interface. These results show constraints on numerical simulation for correlation between defect mechanism and performance.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/630b62beefbd0dc46916fe673d685472ebf899a0