Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
By M. Friesen, S. Chutia, C. Tahan, Susan N. Coppersmith. 2006
150 citations recorded by the source corpus.
We present an effective mass theory for $\mathrm{Si}\mathrm{Ge}∕\mathrm{Si}∕\mathrm{Si}\mathrm{Ge}$ quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter ${v}_{v}$ which encapsulates the physics of the quantum well interface. The new effective mass parameter is computed by means of a tight binding theory. The resulting formalism provides rather simple analytical results for several geometries of interest, including a finite square well, a quantum well in an electric field, and a modulation doped two-dimensional electron gas. Of particular importance is the problem of a quantum well in a magnetic field, grown on a miscut substrate. The latter may pose a numerical challenge for atomistic techniques such as tight binding, because of its two-dimensional nature. In the effective mass theory, however, the results are straightforward and analytical. We compare our effective mass results with those of the tight binding theory, obtaining excellent agreement.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/62f2ad499bbca21695f90b6a12f1b738f9d6ac8c
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Silicon quantum electronics (2012, methodology): “If the step density of the quantum well interface is reasonably high, then the transverse oscillations of the charge density cannot align with the entire interface, and valley splitting is greatly suppressed (Ando, 1979; Friesen et al., 2007b, 2006).”