Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials

By L. Niinistö, J. Paeivaesaari, J. Niinistö, M. Putkonen, Minna Nieminen. 2004

302 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/62dd5304af6500df17bb876efd9e9f80a4c426f5

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In Electrical and Electronic Engineering

1. Xiaohua Du
2. S. George
3. Ya. I. Alivov
4. Hadis Morkoç
5. Natalia Izyumskaya

In Materials Chemistry

1. Hadis Morkoç
2. S. George
3. Ya. I. Alivov
4. Natalia Izyumskaya

Citations in the corpus

• Thickness dependence of sensor response for CO gas sensing by tin oxide films grown using atomic layer deposition (2008, background): “ALD can deposit semiconductor metal oxide films with thicknesses on the order of the Debye length and offers many advantages for gas sensors [ 40 ].”
• Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics (2009, background): “The ALD growth mechanism can be described as a four-step process, 112 wherein a precursor gas is initially introduced followed by an inert gas to remove the unreacted species from the surface (see Figure 4 ).”