Design and performance of an InGaAs-InP single-photon avalanche diode detector
By Sara Pellegrini, R. Warburton, Lionel J. J. Tan, Jody Ng, A. Krysa, K. Groom, John P. R. David, Sergio Cova, Michael J. Robertson, Gerald S. Buller. IEEE Journal of Quantum Electronics, 2006
164 citations recorded by the source corpus.
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.
Subfields: Electrical and Electronic Engineering, Instrumentation, Ophthalmology
View Paper: https://www.semanticscholar.org/paper/62d5866223a37982e5ad02e65db8ec50d7ac38aa
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In Electrical and Electronic Engineering
In Instrumentation
Citations in the corpus
- Single-photon generation and detection (2009, background): “In the last few years, specific growth and fabrication programmes aimed at designs for single-photon operation have yielded devices with improved performance [145, 146].”
- An avalanche-photodiode-based photon-number-resolving detector (2008, background): “Avalanche photodiodes are widely used as practical detectors of single photons.(1) Although conventional devices respond to one or more photons, they cannot resolve the number in the incident pulse or short time interval.”
- Single-photon detectors for optical quantum information applications (2009, unknown): “The best results have been achieved with an InGaAs absorption region and an InP multiplication layer, giving single-photon sensitivities across the 1,000–1,600 nm wavelength range and peak efficiencies of ~20% at 1,550 nm (refs 47–52).”