A brief review of atomic layer deposition: from fundamentals to applications

By Richard W Johnson, A. Hultqvist, S. Bent. 2014

1,737 citations recorded by the source corpus.

Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition. With these advantages, ALD has emerged as a powerful tool for many industrial and research applications. In this review, we provide a brief introduction to ALD and highlight select applications, including Cu(In,Ga)Se2 solar cell devices, high-k transistors, and solid oxide fuel cells. These examples are chosen to illustrate the variety of technologies that are impacted by ALD, the range of materials that ALD can deposit – from metal oxides such as Zn1−xSnxOy, ZrO2, Y2O3, to noble metals such as Pt – and the way in which the unique features of ALD can enable new levels of performance and deeper fundamental understanding to be achieved.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/62ca4e91236075780c21933b0e5f1d726445da81

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Nan Zhang
2. B. Hashemi
3. Kornel F. Ehmann
4. Fengzhou Fang
5. K. Janghorban

In Materials Chemistry

1. Nan Zhang
2. B. Hashemi
3. K. Janghorban
4. Yi‐Jun Xu
5. Zi-Rong Tang

Citations in the corpus

• Metal-core@metal oxide-shell nanomaterials for gas-sensing applications: a review (2015, background): “Because of the long cycle times involved in pulsing and purging precursors and the layer-by-layer nature of the deposition, most ALD rates are on the order of 100–300 nm/h (Johnson et al. 2014).”