Hole mobility in organic single crystals measured by a flip-crystal field-effect technique

By C. Goldmann, S. Haas, C. Krellner, K. Pernstich, D. Gundlach, B. Batlogg. 2004

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We report on single crystal high mobility organic field-effect transistors prepared on prefabricated substrates using a “flip-crystal” approach. This method minimizes crystal handling and avoids direct processing of the crystal that may degrade the field-effect transistors' electrical characteristics. A chemical treatment process for the substrate ensures a reproducible device quality. With limited purification of the starting materials, hole mobilities of 10.7, 1.3, and 1.4cm2∕Vs have been measured on rubrene, tetracene, and pentacene single crystals, respectively. Four-terminal measurements allow for the extraction of the “intrinsic” transistor channel resistance and the parasitic series contact resistances. The technique employed in this study shows potential as a general method for studying charge transport in field-accumulated carrier channels near the surface of organic single crystals.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/625ff56f6be5e824a06eecf136a355786d8a00d2